| PART |
Description |
Maker |
| BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BCM846S |
NPN Silicon AF Transistor Array
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BC857S |
PNP Silicon AF Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| SMBTA06U |
NPN Silicon AF Transistor Array
|
Infineon Technologies A...
|
| SMBT3904S Q62702-A1201 |
NPN Silicon Switching Transistor Array
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SMBTA06UPN-11 |
NPN / PNP Silicon AF Transistor Array
|
Infineon Technologies A...
|
| SMBT3906S Q62702-A1202 |
PNP Silicon Switching Transistor Array
|
SIEMENS A G
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-C2373 BC857S BC857SQ62702C2373 |
TRANSISTOR SOT363
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| BCR08PN07 |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
| BCR22PN07 |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
| SMBT3906 SMBT3906E6327 |
Switching Transistors - PNP Silicon Switching Transistor Array with high current gain
PNP Silicon Switching Transistor Arra...
|
Infineon
|
